Etch Product Instruction May 21 - Copy.pdf

Applied Materials Confidential AMAT Etch Systems Review China Account Etch Group May 21 2012 Applied Materials Confidential Agenda ? AMAT Etcher Overview. ? eMAX Family Etcher Instruction. ? DPS Family Etcher Instruction. ? Producer Instruction. ? Enabler Etcher Instruction. Applied Materials Confidential Applied Materials Confidential AMAT Etch Production Overview By Logical Applications P1 /Dummy gate High K metal gate (High k first) Si Recess Offset SP ON SPT SMT SAB Dummy gate remove PMOS Dummy gate remove NMOS Poly SAB CT M1 TiN HMO M1 ETCH LRM Inter Via Inter Metal TiN HMO Inter layer trench Inter T LRM Top Via Top Metal Trench ET Top trench LRM UTM Al Pad PO1 ET PO1 LRM PO2 ET DPS Mesa DPS Opus DPS Mesa DPS Mesa Enabler Enabler Enabler Producer Centura Centis Opus Platforms Etcher Chambers DPS Mesa Enabler eMAXProducer Applied Materials Confidential Agenda ? AMAT Etcher Overview. ? eMAX Family Etcher Instruction. ? DPS Family Etcher Instruction. ? Producer Instruction. ? Enabler Etcher Instruction. Applied Materials Confidential EMAX Family Road Map 110/90nm ?Throughput up to 110 wph ?MTBC 200 RF Hr ?Low CoC eMax rev2/CT ? Reduced gap ? Showerhead gas plate ? Modified RF delivery ? Top source power ? Dual frequency bias ? Dual gas feed eMax CT+ 90/65nm ?Throughput up to 130 wph ?MTBC up to 1000 RF Hr ?Production proven low CoO ?CD shrink 30nm ? Dual Coolant ESC ? Advanced gas injection ? Y2O3 coated liners ?Improved CD/ER uniformity ?Reduced on-wafer-defects ?Cost-efficient installed base extension eMaxCT+ CIP Applied Materials Confidential 7 300mm eMAX CT+ Configuration Temp. Controlled Reactor Liners Anodized Al Low particle design High MWBC Magnetic Cathode Liner High MWBC, Low Particle design High Pumping Capacity Two 1,600 l/s turbo molecular pumps for SAC and HAR process regime Controllable Magnet Field Ion energy and plasma control High Conductance/ Symmetric Flow Low pressure/high flow processing SAC and HAR process regime Existing eMax