Heat transfer and residual stress modeling of a diamond film heat sink for high power laser diodes.pdf

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Heat transfer and residual stress modeling of a diamond film heat sink for high power laser diodes.pdf

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Heat transfer and residual stress modeling of a diamond film heat sink for high power laser diodes

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 26, NO. 3, SEPTEMBER 2003 575 Heat Transfer and Residual Stress Modeling of a Diamond Film Heat Sink for High Power Laser Diodes Marko Labudovic, Member, IEEE, and Michael Burka, Member, IEEE Abstract—A three-dimensional finite element model of heat transfer and residual stress within high power laser diodes and their heat sinks is developed. These components are typically used in telecommunication applications. The model addresses both p-side down and p-side up laser diodes mounted on a variety of commercially available gold plated diamond heat sinks. In addition, the model is optimized with respect to the dimensions of the diamond film, and the laser diode cavity lengths. Finally, the design and performance of diamond film heat sinks for high performance GaAs and InP laser diodes are discussed. The results demonstrate the superior performance achieved through thermal engineering of the dominant thermal transport path from the laser diode heat source through diamond films to the heat sink. Index Terms—Diamond, finite element model, heat transfer, laser diode, residual stress, telecommunication. NOMENCLATURE Specific heat . Modulus of elasticity . , , Conductivity in , and direction, respectively, . Heat flux . Heat generation rate per unit volume . Time (s). Temperature (K). , , Displacement components in , and direction, respectively (m). Volume of the element . Global coordinates. Density . Strain. Stress . Poisson’s ratio. I. INTRODUCTION W ITH THE widespread use of erbium doped fiber ampli- fiers (EDFAs), diode lasers have rapidly become very important components for optical communication systems [1]. These lasers, whatever the guiding structure, are composed of a quantum well active layer and lattice strained layers grown on GaAs or InP based materials [2], [3]. Due to the large nonuni- Manuscript received March 1, 2002; revised March 1, 2003. This work was recommended for publication by Associat