IGBT芯片 IRGP4660DPbF.pdf

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE                  VCES = 600V IC = 60A, TC = 100°C tSC ??5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 48A TO-247AC IRGP4660DPbF TO-247AD IRGP4660D-EP G C E C G C E C E G n-channel C G C E Gate Collector Emitter Applications ? Industrial Motor Drive ? Inverters ? UPS ? Welding Form Quantity IRGP4660DPbF TO-247AC Tube 25 IRGP4660DPbF IRGP4660D-EPbF TO-247AD Tube 25 IRGP4660D-EPbF Base part number Package Type Standard Pack Orderable part number Features Benefits Low VCE(ON) and Switching Losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and Maximum Junction Temperature 175°C Improved reliability due to rugged hard switching performance and higher power capability Positive VCE (ON) Temperature Coefficient Excellent current sharing in parallel operation 5μs short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 100 IC @ TC = 100°C Continuous Collector Current 60 ICM Pulse Collector Current, VGE = 15V 144 ILM Clamped Inductive Load Current, VGE = 20V  192 A IF @ TC = 25°C Diode Continous Forward Current 100 IF @ TC = 100°C Diode Continous Forward Current 60 IFM Diode Maximum Forward Current 192 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 330 W PD @ TC = 100°C Maximum Power Dissipation 170 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units R?JC (IGBT) Junction-to-Case (IGBT)  ––– ––– 0.45 °C/W R?JC (Diode) Junction-to-Case (Diod