PROOF COPY [JES-05-1034R] 070512JES Mechanisms for Formation of a One-Dimensional Horizonta.pdf

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PROOF COPY [JES-05-1034R] 070512JES Mechanisms for Formation of a One-Dimensional Horizonta.pdf

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PROOF COPY [JES-05-1034R] 070512JES Mechanisms for Formation of a One-Dimensional Horizonta

PROOF COPY [JES-05-1034R] 070512JES P R O O F C O P Y [J E S -0 5 -1 0 3 4 R ] 0 7 0 5 1 2 J E S Mechanisms for Formation of a One-Dimensional Horizontal Anodic Aluminum Oxide Nanopore Array on a Si Substrate Zhi Chenz and Hongguo Zhang Department of Electrical and Computer Engineering and Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, Kentucky 40506, USA A simple theoretical model based on electric-field-assisted growth and dissolution of the barrier oxide has been proposed to understand the mechanisms for formation of a one-dimensional 1D anodic aluminum oxide AAO nanopore array. It is shown that formation of a one-dimensional horizontal nanopore array is the natural result of the self-adjusting effect of anodic oxidation. Because the electric field for anodization is in parallel with an aluminum film, the porous structure is formed on the side of aluminum. When the thickness of an aluminum film approaches the size of a single cell, a single array of nanopores evolves after anodization in a steady state for sufficiently long time. Our experimental results support the theoretical model. A well-ordered one-dimensional nanopore array was obtained at 40 V in 0.3 M oxalic acid solution using the modified two-step anodization procedure. ? 2005 The Electrochemical Society. DOI: 10.1149/1.2120347 All rights reserved. Manuscript submitted June 28, 2005; revised manuscript received August 10, 2005. Various carbon nanotube- and nanowire-based nanoscale elec- tronic devices, such as field-effect transistors FETs, single-electron transistors SETs, metal-semiconductor diodes, rectifiers, and nano- wire pumped lasers have been in the spotlight of nanoscale science and engineering due to their superior performance, such as unique electronic properties, strong mechanical strength, chemical and thermal stability.1-6 However, most of these nanoscale devices were fabricated using scanning tunneling microscope STM and atomic for