EnhancedLightOutputPowerofInGaNGaNMQWLEDs.docVIP

Enhanced Light Output Power of InGaN/GaN MQW LEDs by Roughening the p-GaN Surface with Periodic Textured TCL 1Shun-yuan Huang, 1Hon Kuan*, 1Tsung-Yu Li, 2Wei-Chih Cheng, 3Chan-Shou Wu 1Department of Electro-Optical Engineering, Southern Taiwan University, Tainan County 710, Taiwan 2Department of Photonic, National Sun Yat-sen University, Kaohsiung 80424, Taiwan 3Institute of Electro-Optical Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung 811, Taiwan. ( HYPERLINK mailto:hkuan@mail.stut.edu.tw hkuan@mail.stut.edu.tw, NSC-97-2221-E-218-009) GaN light emitting diodes (LEDs) with a rough surface were demonstrated and fabricated by MOCVD. On the other hand ,deposition and production of periodic textured structure of different metal materials as Ni/Au (i.e LED I and LED II) and ITO (i.e LED III and LED IV) on the rough surface, respectively. The light intensity from the LED I increased by 5.1% at injection currents of 20mA compared to that of LED II, on the side, The light intensity form the LED III by ITO showed an enhancement of 15% when compared LED IV. Finally, LED I enhanced output power by 57% at 20 mA, as compared to the LED IV. GaN, light-emitting diodes (LEDs), periodic textured structure. Introduction In recent years, GaN-based wide band gap materials have attracted much attention since high-brightness blue and green light-emitting diodes(LEDs) have become commercially available. GaN-based laser diodes(LDs) operating at room temperature have also been demonstrated[1–3]. However, despite the remarkable progress in device performance, there still remain many problems that need to be solved. For example, a low carrier concentration means a highly resistive epitaxial layer. As a result, it is difficult to reduce the contact resistance in between metal and p-GaN. In this study, we succeed growth the rough surface of the GaN LED. In addition, rough surface of the GaN LED with periodic textured structure was production and t