IC制造流程简介讲解.ppt

IC制造流程简介ANDY;相关定义;相关定义;相关定义;Wafer Start;製程;The Introduction to The Manufacturing Process of VLSI;晶圓(Wafer);;(a) As-grown crystal;微影(Photolithography);Wafer;Continue;Doping: To get the extrinsic semiconductor by adding donors or acceptors, which may cause the impurity energy level. The action that adding particular impurities into the semiconductor is called “doping” and the impurity that added is called the “dopant”. ;Pre-deposition: To put the impurities on the wafer surface. Generally used dopant resource furnace design: ;Drive-in: To implant the dopant into the wafer by the thermal process;1. The definition: A manufacturing process that can uniformly implants the ions into the wafer in the specified depth and consistence by selecting and accelerating ions. 2. The purpose: To change the resistance value of the semiconductor by implanting the dopant. 3. Energy range (8 years ago) (1) General process：10 KeV - 180 KeV (0.35?m) (100KeV for 0.18 ?m now) (2) Advanced process：10 KeV - 3 MeV (0.5?m) (3) RD process：0.2 KeV - 5 KeV;;Parameters Doping elements selection Scanning uniformity control Temperature control Concentration control ;Physical Vapor Deposition;Chemical Vapor Deposition;(1) Thermal Oxidation The growth temperature is above 900 0C. High quality SiO2. (2) Low Pressure CVD (LPCVD) The growth temperature is around 400 0C to 750 0C. Better step coverage ability. (3) Plasma Enhanced CVD (PECVD) The growth temperature is under 400 0C. In the case of the Al deposition and non-thermal process. ;;Major Parameters In CMP;Slurry;Wafer Cleaning;;Positive Resist;Etching Methods;Wet Etching;(a) Isotropic Etching：A=0 (Erh=Erv);;(a) Sputtering Etching;Scheme Diagram of RIE System;Annealing;Furnace;Rapid Thermal Processing;Halogen-W Heater (vertical);The End