- 1、本文档共6页,可阅读全部内容。
- 2、有哪些信誉好的足球投注网站(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
- 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载。
- 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
2008In situ observation of Si faceted dendrite growth from
Available online at /locate/actamat
Acta Materialia 56 (2008) 2663–2668In situ observation of Si faceted dendrite growth from
low-degree-of-undercooling melts
Kozo Fujiwara *, Kensaku Maeda, Noritaka Usami, Gen Sazaki, Yoshitaro Nose,
Akiko Nomura, Toetsu Shishido, Kazuo Nakajima
Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
Received 13 July 2007; received in revised form 30 January 2008; accepted 30 January 2008
Available online 6 March 2008Abstract
We directly observed the transition of crystal growth behavior of Si in a low undercooling region. We succeeded in observing the
initiation of faceted dendrite growth from a portion of parallel twins with increasing degrees of undercooling. The critical undercooling
for growing a faceted dendrite was experimentally determined to be DT = 10 K. We also confirmed that parallel twins associated with
faceted dendrite growth were formed between grain boundaries and not at grain boundaries during melt growth. The parallel-twin for-
mation was explained in terms of a model of twin formation on the {111} facet plane at the growth interface.
2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Keywords: Faceted dendrite; Solid/liquid interface; Silicon; Undercooling; Twin boundary1. Introduction
Many fundamental studies of faceted dendrites of Si and
Ge have been carried out over the last 50 years [1–21].
These have shown that faceted dendrite growth occurs
when a crystal with more than two parallel twins grows
from an undercooled melt. Recently, dendrites grown from
a highly undercooled Si or Ge melt have been extensively
investigated by flux methods [9–12] or electromagnetic lev-
itation (EML) methods [13–20]. Aoyama and coworkers
directly observed crystal growth processes from under-
cooled Si melts by an EML method with a high-speed cam-
era [14,15]. They succeeded in determining the relationship
between growth velocity, V, and degree of under
您可能关注的文档
- 02 - Wealth Distribution.pdf
- 02_Overheads before class part2.pdf
- 02转抗虫基因植物生态安全性研究进展.pdf
- 03-地图显示与操作.pdf
- 03 OceanBase 0.4.2 配置指南.pdf
- 04-风工程OpenFOAM基础培训-风与湍流.pdf
- 04 Improved Fault-Prone Detection Analysis of Software.pdf
- 03 关系数据模型及其运算基础.pdf
- 040-SalesWave Deep Dive- PAN-OS-6.0 For Virtualized Environments-CNO.pdf
- 041_CZ_EN捷克教育结构.pdf
- 2021-2026年中国自动化装备市场全面调研及行业投资潜力预测报告.docx
- 中国集装箱船行业市场全景评估及发展战略规划报告.docx
- 中国汽车门锁行业市场调研分析及投资战略咨询报告.docx
- 2025年中国食品检验设备行业市场全景评估及投资前景展望报告.docx
- 2025年中国防爆电机行业发展潜力分析及投资方向研究报告.docx
- 中国石油设备制品行业发展潜力分析及投资方向研究报告.docx
- 2025年中国电力设备开关行业市场发展现状及投资策略咨询报告.docx
- 2021-2026年中国混凝土机械行业投资分析及发展战略研究咨询报告.docx
- 中国晶闸管交流稳压器行业全景评估及投资规划建议报告.docx
- 中国防爆电气自动化设备行业全景评估及投资规划建议报告.docx
文档评论(0)