2SC2712S-GR,LF;2SC2712S-Y,LF;中文规格书,Datasheet资料.pdf

2SC2712 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications ? High voltage and high current: VCEO = 50 V, IC = 150 mA (max) ? Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) ? High hFE: hFE = 70~700 ? Low noise: NF = 1dB (typ.), 10dB (max) ? Complementary to 2SA1162 ? Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg ?55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) / 2SC2712 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ? ? 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 0.1 μA DC current gain hFE (Note) VCE = 6 V, IC = 2 mA 70 ? 700 Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ? 0.1 0.25 V Transition frequency fT VCE = 10 V, IC = 1 mA 80 ? ? MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ? 2.0 3.5 pF Noise figure NF