2SK3557-6-TB-E;中文规格书,Datasheet资料.pdf

2SK3557 No.7169-1/6 Applications ? AM tuner RF amplifi cation ? Low noise amplifi er Features ? Large | yfs | ? Small Ciss ? Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer ? Ultralow noise fi gure Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS --15 V Gate Current IG 10 mA Drain Current ID 50 mA Allowable Power Dissipation PD 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7013A-011 Ordering number : EN7169A 62012 TKIM/60502 TSIM TA-3622 SANYO Semiconductors DATA SHEET 2SK3557 N-Channel Junctin Silicon FET High-Frequency Low-Noise Amplifi er Applications /en/network Product Package Information ? Package : CP ? JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB ? Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection TB 1 : Source 2 : Drain 3 : Gate SANYO : CP 1 2 3 1. 5 2. 5 1. 1 0. 3 0. 05 2.9 0.95 0.4 0.1 0. 5 0. 5 1 2 3 IR LO T N o. RANK LO T N o. 2SK3557-6-TB-E 2SK3557-7-TB-E / 2SK3557 No.7169-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10μA, VDS=0V --15 V Gate Cutoff Current IGSS VGS=--10V, VDS=0V --1.0 nA Cutoff Voltage VGS(off) VDS=5V, ID=100μA --0.3 --0.7 --1.5 V Drain Current IDSS VDS=5V, VGS=0V 10* 32* mA Forward Transfer Admittance | yfs | VDS=5V, VGS=0V, f=1kHz 24 35 mS Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 10.0 pF Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz 2.9 pF Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB * : The 2SK3557 is classifi ed by IDSS as follows : (unit : mA) Rank 6 7 IDSS 10.0 to 20.0 16.0 to 32.0 Ordering Information Device Package Shipping memo 2SK3557-6-TB-E CP 3,000pcs./reel Pb Free 2SK3557-7-TB-E CP 3,000pcs./reel ID -- VGS IT04224 ID -- VGS ITR02752 0 0 ID --