AOT2606L规格书.pdf

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary V DS I D (at V GS =10V) 72A R DS(ON) (at V GS =10V) 6.5m? ( 6.2m??) 100% UIS Tested 100% R g Tested Symbol V DS V GS 60V AOT2606L/AOB2606L AOTF2606L Drain-Source Voltage 60 The AOT2606L AOB2606L AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) , Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. V UnitsParameter Absolute Maximum Ratings TA=25°C unless otherwise noted V±20Gate-Source Voltage G D S TO-263 D 2 PAK G D S G D S D S G Top View TO-220FTO-220 AOTF2606LAOT2606L AOB2606L I DM I AS E AS T J , T STG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 54 56 38 260 Maximum Junction-to-Case Pulsed Drain Current C Continuous Drain Current G Power Dissipation A 15 T C =100°CPower Dissipation B P D 57.5 18 -55 to 175 °C/W °C/WMaximum Junction-to-Ambient A D 1.3 60 4.1 W T A =70°C 1.3 T A =25°C 2.1 P DSM A T A =25°C I DSM 115 36.5 13 72 60 Avalanche energy L=0.1mH C A T A =70°C Continuous Drain Current 180 I D W T C =25°C °C Thermal Characteristics Parameter AOT2606L/AOB2606L AOTF2606L Maximum Junction-to-Ambient A °C/W RθJA 15 60 T C =25°C T C =100°C mJ Avalanche Current C 10 A Units Junction and Storage Temperature Range Rev 1 : Mar. 2012 Page 1 of 7 AOT2606L/AOB2606L/AOTF2606L Symbol Min Typ Max Units BV DSS 60 V V DS =60V, V GS =0V 1 T J =55°C 5 I GSS ±100 nA V GS(th) Gate Threshold Voltage 2.5 3 3.5 V I D(ON) 260 A 5.4 6.5 T J =125°C 8.5 10.5 g FS 75 S V SD 0.7 1 V I S 72 A C iss 4050 pF C oss 345 pF C rss 16.8 pF R g 0.3 0.65 1.0 ? Q g (10V) 53 75 nC Q g (4.5V) 22 31 nC Q gs 17 nC Q gd 5 nC t 18 ns Ele