功能材料4：半导体制造技术2013选编.ppt

第三章：晶体材料与半导体加工技术Crystal Materials and Semiconductor Processing Technology;§3. 1 单晶材料的基本物性 Basic Properties of Crystal Materials 3.1.1 晶体的宏观通性 Gerneral Macro-properties 晶面角守恒性 Constancy of interfacial angles 均匀性 homogeneity 各向异性 anisotropy 解理性 cleavage 对称性 symmetry ;3.1.2 晶体物理性质与微观对称性的关系 Relationship between the physic properties and micro-symmetry of crystals ;;3.2 晶体的缺陷 Defects of crystals ;【微观缺陷】;【线缺陷】line dislocations;;;位错的移动：滑移;螺旋位错 screw dislocation;单晶硅中观察到的螺旋位错缺陷;表面 （对真空） surface 界面 interface ;孪晶界;小角度晶界;;;;【宏观缺陷】Macrocopic defects:;;;;;§3.3 半导体晶体及晶片制备技术 Processing Technology of SemiconductorCrystal its Wafer ;3.3.1 概述 Introduction ;3.3.2 硅原料处理和提纯  Producing Raw Silicon and its purifying ;【硅提纯】Purifying of si ;CVD Schematic diagram;;More information;3.3.3 单晶制备 Single Crystal Growth ;;·Essentially, a crystal is pulled out of a vessel containing liquid Si by dipping a seed crystal into the liquid at a surface temperature of the melt just above the melting point. ·Everything else determines the quality and homogeneity - crystal growing is still as much an art as a science! Here we only look at one major point, the segregation coefficient kseg of impurity atoms ·Equilibrium refers to a growth speed of 0 mm/min or, more practically, very low growth rates. ·On the positive side, the crystal will be cleaner than the liquid, crystal growing is simultaneously a purification method. · The negative side: The distribution of impurities - and that includes the doping elements and oxygen - will change along the length of a crystal - a homogeneous doping etc. is difficult to achieve.This is Why practically only As, P, and B are used for doping? Their segregation coefficient is close to 1. (But Bi difficult or impossible). ;;;;;;;【 区熔法 】Float Zone Crystal Growth 原理：The method was first used for purification taking advantage of the small segregation coefficients of many impurities. The impurities contained in th