第4章3LTPS的特征.pptVIP

Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;;;低温多晶硅的晶化 均匀的线状准分子激光束扫过非晶硅表面。 该激光束可以有效地被薄层a-Si吸收，而不引起基板的升温、破裂。 由于该激光束的加热作用，薄层a-Si被加热熔化，随着温度的降低转化为p-Si。;Normal;;;;;;;;单栅Top-Gate Poly-Si TFTs 工艺;Top-Gate Poly-Si TFTs;Fig. 15.2 (a) 底层A SiO2 或 SiNX 膜 通过 PECVD 沉积,用来 Na+向 TFT层的扩散 50nm a-Si 通过 PECVD ???积, 通过 干法刻饰 . 通过激光低温晶化工艺使: a-Si → P-Si ;Fig. 15.2 (b) SiO2 阻挡层的作用 保护 a-Si 半导体 , 减少表面缺陷 ; 离子注入工艺的阻挡层 ; 激光束的耦合层,减少 光辐射的强度; 删绝缘层 通过离子溅射和平面工艺制作删电极;Fig. 15.2 (c) 栅电极可以作为 自对准离子注入B、P制做drain , source 的 n+ P-Si的掩膜. SiO2 passivation layer is deposited on top of gate . Fig. 15.2 (d) 刻蚀 SiO2 沉积 source , drain 电极;多栅Top-Gate Poly-Si TFTs 工艺;LTPS Process Flow;1.B11 for P-TFT S/D doping of (Mask 5) 2. Activation;1. Buffer-Layer/ a-Si Precursor 2. Dehydrogenation ;1.Poly-island pattern (Mask 1);P31+; 1.N- Pattern of NMOS LDDN- Doping (Mask-3);1.P+ Pattern P+ Doping (Mask 4) ;1.Gate Metal Sputter 2. Gate Metal Pattern (Mask-5) ;p;p;p;p;p;Sanyo 1.8”;Fujitsu;周边电路的TFT;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;LTPS 技术优点;LTPS 技术优点