对n型S i外延片表面处理方法的研究.pdfVIP

M anufacturing Technology do:i 103969/ jissn1003- 353x201101007 n S i 1 1 2 2 安静 , 杨瑞霞 , 袁肇耿 , 张志勤 ( 1河北工业大学 信息工程学院, 天津 300130; 2河北普兴电子科技股份 限公司, 石家庄 050051) : i外延片是制造半导体器件和集成电路最常用的半导体材料外延层电阻 是外延 片最重要的参数之一, 它直接影响器件的性能简要分析了自动汞探针CV测试仪测量电阻 前 进行表面处理的原因, 研究了不同的表面处理方法对电阻 测试结果的影响, 发现对于外延层的 电阻 1 cm的 n型 i外延片, 采用紫外光 ( UV ) 表面处理是一种合适的表面处理方法, 该方法应用于实际生产测试过程 : 外延片; 电阻 ; 汞探针 CV 测试仪; 表面处理; 紫外光 : TN3052 : A : 1003- 353X ( 2011) 01- 0022- 04 Research on Surface Treatm entM ethods of nType Epitaxial SiliconW afer 1 1 2 2 An Jing, Yang Ruixia, Yuan Zhaogeng, Zhang Zh iqin ( 1School of Inf ormation Eng ineering, H ebei University of T echnology, T ianj in 300130, China; 2H ebeiP oshing E lectronic Technology Co. , td. , Shij iazhuang 050051, Ch ina) Abstract: ilicon ep itaxial w afer is the most commonly used sem iconductor material in the manufacture of sem iconductor devices and integrated circuits. Resistivity is one of the most mi portant parameters of epitaxial w afer, and directly affects the device s performance. The reason of surface treatments before resistivity measurement using automatic mercury probe CV measuring system w as analysed. The influnces of d ifferent treatment methods on measurement resu lts w ere stud ied. The expermi ental resu lts indicate that for ntype epitaxial wafer w ith resistivity more than 1 cm, u ltraviolet ( UV) surface treatment is a suitable surface treatmentm ethod. Now th is methods is used in practical production and measuring process. K ey words: epitaxialw afer; resistiv