微电子封装用SiCp／AI复合材料的中温钎焊.pdfVIP

学兔兔 第15卷第3期 粉末冶金材料科学与工程 2010年6月 、，0l_l5 No．3 Materials Science and Engineering of Powder Metallurgy Jun．2010 — — 微电子封装用SiCp／AI复合材料的中温钎焊 常玲玲，何新波，吴 茂，曲选辉 (北京科技大学 材料科学与工程学院，北京 100083) 摘 要：选用A1一Ag—Cu和A1．Si．Cu．Ni两种钎料，分析钎料的熔化特性和微观组织，并分别用于钎焊化学镀Ni 后的SiCp／Al复合材料，研究其结合机理。结果表明，A1．Ag．cu和A1．Si．Cu-Ni都具有很好的熔化特性，熔点均 在520~530℃之间，具有很窄的熔化温度区间。用这2种钎料钎焊化学镀Ni后的SiCp／Al复合材料时，Ni镀层 与A1基体发生反应生成A13Ni和Al3Nj2化合物层，同时与钎料发生界面反应生成A1．Ni—Cu和A1-Ag-Cu等化合物， 从而保证钎焊接头牢固的连接。钎料中的Ag和cu元素穿过Ni(P)镀层，扩散到Al基体中，形成Al2cu、Ag2Al 等金属间化合物。 关键词：微电子封装；SiCp／Al复合材料；钎焊；金属问化合物 中图分类号：TN305．94 文献标识码：A 文章编号：1673．0224(2010)3．219．06 Brazing of SiCp／Al composites for microelectronic packaging CHANG Ling—ling，HE Xin—bo，wU Mao，Qu Xuan—hui (School ofMaterials Science and Engineering，University ofScience and Technology Beijing，Beijing 100083，China) Abstract：A1-Ag—Cu and A1-Si-Cu-Ni brazing alloys have been developed for brazing of SiCp／A1 composites coated by Ni．It is found that both of the two brazing alloys have the melting point in the region of 520-530℃ and a narrow melting temperature range．During brazing，the Ni layer reacts with A1 substrate and forms A13Ni and A13Ni2 compounds． Meanwhile，the Ni layer reacts wim the two brazing alloys and form s A1·Ni-Cu and A1一Ag—Cu compounds，which ensures a good bonding strength of brazing joint．It has been also found that the Ag and Cu elements penetrate through the Ni layer during brazing