InGaAs固体微光器件研究进展_史衍丽.pdf

第36 卷 第2 期 红 外 技 术 Vol.36 No.2 2014 年2 月 Infrared Technology Feb. 2014 〉 InGaAs （北方夜视科技集团，云南昆明650023 ） ：InGaAs InGaAs InGaAs 320 ×256 InGaAs InGaAs InGaAs ：InGaAs TN215 A 1001-8891(2014)02-0081-08 Progress of InGaAs Solid-State Low-Light Devices SHI Yan-li，HU Rui ，ZHANG Wei-feng ，FENG Yun-xiang ，DENG Gong-rong ， CHU Zhu-jun，LI Yan-hong ，GUO Qian，LU Qiang (North Night-Vision Science and Technology Group CORP. LTD, Kunming 650023, China) Abstract ：InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high temperature operation, high reliability and long lifetime etc., it has gained vital development and application in the world. The InGaAs material properties, devices performance and imagery characterization was analyzed in detail, InGaAs devices development trend was introduced, the new advancement of 320 ×256 InGaAs arrays was depicted. The results of study showed both material growth and devices fabrication technology of InGaAs devices were easy to control and have excellent stability, providing technical support for realizing high performance and practical devices. Key words ：InGaAs ，solid-state low-light devices，quantum efficiency，high temperature operation ， avalanche diode [1-3] 了有力的探测手段 。 0