1N60、1N60P 小电流低压降 肖特基二极管.pdf

1N60-1N60P Wuxi Xuyang Electronics Co Ltd Shottky Barrier Diode FEATURES 1. High reliability 2. Low reverse current and low forward voltage APPLICATIONS Low current certification and high speed switching. CONSTRUCTION Silicon epitaxial planar. ABSOLUTE MAXIMUM RATINGS T =25ºC j Parameter Test Conditions Type Symbol Value Unit 1N60 V RRM 40 V Repetitive peak reverse voltage 1N60P V RRM 45 V 1N60 IFSM 150 mA Peak forward surge current t 1s p = 1N60P IFSM 500 mA 1N60 IF 30 mA Forward continuous current T = 25ºC a 1N60P IF 50 mA Storage temperature range Tstg -65~+125 ºC MAXIMUM THERMAL RESISTANCE T =25ºC j Parameter Test Conditions Symbol Value Unit Junction a