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IEC 61215 61646 太阳能电池面板测试失效分析.pdf

IEC 61215 61646 太阳能电池面板测试失效分析.pdf

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IEC 61215 61646 太阳能电池面板测试失效分析

Fab Failure analysis of design qualification Facilities Materials testing: 2007 vs. 2005 Cell G. TamizhMani, B. Li, T. Arends, J. Kuitche, B. Raghuraman, W. Shisler, K. Farnsworth, J. Gonzales, A. Voropayev, Processing Arizona State University Photovoltaic Testing Laboratory (ASU-PTL), Mesa, Arizona, USA This article first appeared in Photovoltaics International journal’s first edition in August 2008. Thin Film ABSTRACT PV Design and performance qualification testing of PV modules consists of a set of well-defined accelerated stress tests with Modules strict pass/fail criteria. ASU-PTL is an ISO 17025-accredited testing laboratory and has been providing photovoltaic testing services since 1992. This paper presents a failure analysis on the design qualification testing of both crystalline Power silicon (c-Si) and thin-film technologies for two consecutive periods: 1997-2005 and 2005-2007. In the first period, the Generation industry was growing at a slower rate with traditional manufacturers, with qualification testing of c-Si technologies being primarily conducted per Edition 1 of the IEC 61215 standard. In the second period, the industry was growing at Market an explosive rate with new manufacturers joining the traditional manufacturers, while qualification testing of c-Si was Watch primarily conducted per Edition 2 of IEC 61215. Similar failure analysis according to IEC 61646 has also been carried out for thin-film technologies. The failure analysis of the test results presented in this paper indicates a large increase in the failure rates for both c-Si and thin-film technologies during the period of 2005-2007. I

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