铝阳极氧化膜的半导体特性.pdf

物理化学学报(Wuli Huaxue Xuebao) January Acta Phys. Chim. Sin., 2008, 24(1) ：147-151 147 [Note] 铝阳极氧化膜的半导体特性 赵景茂* 谷 丰 旭辉 左 禹 ( 京化工大学材料科学与工程学院, 北京 100029) ： 摘要 采用Mott Schottky 理论结合氧化膜点缺陷模型(PDM)研究了工业纯铝L2 阳极氧化膜的半导体性质, 分别计算了沸水封闭和重铬酸钾封闭后阳极氧化膜的施主浓度、氧空穴扩散系数及平带电位. 结果表明, 铝阳极 氧化膜封闭前后都具有n 型半导体性质, 且施主浓度随着电压的升高呈指数递减. 使用不同方法封闭的阳极氧 化膜的氧空穴扩散系数为(1.12-5.53)伊10-14 cm-2 ·s-1, 封闭后阳极氧化膜平带电位降低. ： ； ； ； 关键词 工业纯铝 阳极氧化膜 半导体 Mott Schottky 曲线 ： 中图分类号 O646 Semiconductor Properties of Anodic Oxide Film Formed on Aluminum ZHAO Jing Mao* GU Feng ZHAO Xu Hui ZUO Yu (College of Materials Science and Engineering, Beiji ng University of Chemical Technology, Beijing 100029, P. R. China) Abstract ： The semiconductor properties of anodic oxide film formed on commercial pure aluminum were analyzed using Mott Schottky theory and point defect model (PDM). The donor density, oxygen vacancy diffusion coefficient and flat band potential were measured for the oxide films sealed by boiling water and K Cr O , respectively. The results 2 2 7 indicated that the anodic oxide films showed the n type semiconductor property and the donor density decreased exponentially with the voltage elevating. The value of oxygen vacancy diffusion coefficient is about (1.12-5.53)伊10-14 cm-2 ·s-1. The flat band potential of anodic oxide film declined after sealing. Key Words: Commercial pure aluminum; Anodic oxide f