查询ACE2302供应商.PDF

  查询ACE2302供应商                                                                                       ACE2302                         Technology N-Channel Enhancement Mode MOSFET Description The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • 20V/3.6A, RDS(ON)=80mΩ@VGS=4.5V • 20V/3.1A, RDS(ON)=95mΩ@VGS=2.5V • Super high density cell design for extremely low RDS(ON) • Exceptional on-resistance and maximum DC current capability Application • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V T =25℃ 3.2 Continuous Drain Current (T =150℃) A I A J D TA=70℃ 2.6 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.6 A T =25℃ 1.25 A Power Dissipation PD W TA=70℃