DTU15N10原厂资料.pdf

DTU15N10 N-Channel Enhancement Mode Field Effect Transistor Features 100V/15A Pin Description RDS (ON) = 95mΩ (Type) @ VGS=10V RDS (ON) = 115mΩ (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged TO-252 package PIN1 Lead Free and Green Devices Available (ROHS Compliant) Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered System. ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-to-Source Voltage 100 V VGSS Gate-to-Source Voltage ±20 V I * Continuous Drain Current@ TJ = 125 ℃ 15 D VGS=10V A IDM* Pulsed Drain Current (tp ≤10us) 55 I * Diode Continuous Forward Current 1.25 A S TA = 25℃ 50 W P * Total Power Dissipation D TA = 100℃ 25 W T , J Operating and Storage Temperature Range -55 to 150 ℃ TSTG Thermal Resistance, Rth JA* 50 ℃/W Junction-to-Ambient Maximum Lead Temperature for TL