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室温下nc-Si_SiO-sub-2-_sub-多层膜结构中的共振隧穿现象
Vol. 32,No. 8 JournalofSemiconductors August2011
Resonanttunnelling in nc-Si/SiO multilayersat roomtemperature
Chen Deyuan(陈德媛)
Collegeof Electronic Science Engineering, Nanjing University of PostsandTelecommunications,Nanjing210046,China
NanjingNational Laboratory of Microstructures and Key Laboratory ofAdvancedPhotonicandElectronicmaterials,
Department of Physics, Nanjing University,Nanjing 210093, China
Abstract: Nc-Si/SiO multilayerswerefabricatedonsiliconwafersinaplasmaenhancedchemicalvapourdepo-
sition system using in situ oxidation technology, followed by three-step thermal treatments. Carrier transportation
at room temperature is characterized by current voltage measurement, and negative different conductances can be
observed both under forward and negative biases, which is explained by resonant tunnelling. The resonant tun-
nellingpeakvoltageisrelatedtothethicknessesofthenc-SiandSiO sublayers.Andtheresonanttunnellingpeak
voltageundernegativebiasislargerthanthatunderforwardbias.Anenergybanddiagramandanequivalentcircuit
diagramwereconstructed to analyze and explain the above transportation process and properties.
Keywords: resonanttunnelling; work function; quantum dots
DOI: 10.1088/1674-4926/32/8/083004 PACC: 7335C;7340C;7320D
2. Experiments
1. Introduction
The samples were deposited in a plasma enhanced chem-
Silicon quantum dots have been studied for years and ical vapour deposition system, alternating amorph
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