EPC9006;EPC2007;中文规格书,Datasheet资料.pdf

eGaN® FET DATASHEET EPC2007 EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V NEW PRODUCT RDS(ON) , 30 mW EFFICIENT POWER CONVERSION ID , 6 A HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag- ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec- tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as EPC2007 eGaN® FETs are supplied only in those where on-state losses dominate. passivated die form with solder bumps Applications Maximum Ratings • High Speed DC-DC conversion VDS Drain-to-Source Voltag