2SC2458三极管 datasheet.pdf

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit: mm Low Noise Audio Amplifier Applications High current capability: IC = 150 mA (max) High DC current gain: hFE = 70~700 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Low noise: NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1048 (L). Small package. Maximum Ratings (Ta 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA JEDEC ― Base current IB 50 mA Collector power dissipation PC 200 mW JEITA ― Junction temperature Tj 125 °C TOSHIBA 2-4E1A Storage temperature range Tstg 55~125 °C Weight: 0.13 g (typ.) Electrical Characteristics (Ta 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB 50 V, IE 0