WAT测试方法.ppt

WAT 测量项目以及测试方法 2008/03/07 WAT Introduction WAT是什么 WAT系统介绍 3. WAT测试项目及方法 Wafer Acceptance Test（晶片允收测试） 半导体硅片在完成所有制程工艺后，针对硅片上的各种测试结构所进行的电性测试。 通过对WAT数据的分析，我们可以发现半导体制程工艺中的问题，帮助制程工艺进行调整。 WAT是什么? WAT系统介绍 Manual Prober Agilent 4284A CV Meter Agilent 4156A IV Meter Cascade Manual Prober WAT系统介绍 Agilent 4070 system TEL P8XL Agilent 4070 WAT系统介绍 HP 4070 Server Agilent 81110A Pulse Generator Agilent 4284A CV Meter Agilent E4411B Spectrum Analyzer Agilent 4070 内部结构 Agilent 3458A Digit Multimeter Wafer Auto-Prober Relay Metric Server EDA Server Test Key Probe card SMU PIN No Data Data Product information Test Program Control command DC tester CV Meter 4070 Server WAT 流程图 WAT测试项目 MOS device Field Device Junction Gate Oxide Resistor Bipolar Device Layout Rule Check 常见的几种器件结构 MOS Device Item name Method of measurement Ids Vd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/Width Vt0 Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V, use maximum slope method,Vt0=Xintercept –1/2*Vd Vt1 Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V,measure Id,Vt1=Vg@Id=0.1uA*Width/Length Isub Vd=Vdd, Vs=Vg=0, sweep Vg from 0 to Vdd to get maximum Isub current Ioff Vd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/Width Bvd Vg=Vs=Vb=0, sweep Vd from 0V to Vdstop(3Vdd), measure Id, Bvd=Vd@Id=0.1uA/um 以 NMOS 为例： 2. Field Device Item name Method of measurement Vt Vd=1.1Vdd, sweep Vg from 0V to Vgstop(3Vdd),measure Id, Vt=Vg@Id=10nA/um Ileak Vg=Vd=1.1Vdd, measure Id, Ileak=Id/Width Vpt Vg=1.1Vdd, sweep Vd from 0V to Vdstop(3Vdd),measure Id, Vpt=Vd@Id=10nA/um WAT Item Name(以Poly Nfield为例) : VtNfpS (field Vt) IleakNfpS VptNfpS (punchthrough Vt) 3. Junction WAT Item Name (以N+/PW junction为例) : CNj IleakNj BvNj Item name Method of measurement Cj Vg=0V, Vb=GND, apply a 0.03V AC signal to measure C value, Cj=C/Area Ileak Vg=1.1Vdd, measure Ig, Ileak=Ig/Area Bv Vb=0, sweep Vg from 0V to Vgstop(3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2 4. Gate Oxide WAT Item Name(以PW gate oxide为例) : Cgpw