磁控溅射镀膜技术的发展_余东海.pdf

第46 卷第2 期 真 空 VACUUM Vol. 46, No. 2 2009 年3 月 Mar. 2009 磁控溅射镀膜技术的发展 余东海，王成勇，成晓玲，宋月贤 （广东工业大学机电学院， 广东 广州 510006） 摘 要：磁控溅射由于其显著的优点应用日趋广泛，成为工业镀膜生产中最主要的技术之一，相应的溅 射技术与也取得了进一步的发展。非平衡磁控溅射改善了沉积室内等离子体的分布，提高了膜层质量；中 频和脉冲磁控溅射可有效避免反应溅射时的迟滞现象，消除靶中毒和打弧问题，提高制备化合物薄膜的 稳定性和沉积速率；改进的磁控溅射靶的设计可获得较高的靶材利用率；高速溅射和自溅射为溅射镀膜 技术开辟了新的应用领域。 关键词：镀膜技术；磁控溅射；磁控溅射靶 中图分类号：TB43 文献标识码：A 文章编号 1002-0322 （2009）02-0019-07 ： Recent development of magnetron sputtering processes YU Dong-hai, WANG Cheng-yong, CHENG Xiao-ling, SONG Yue-xian ( Guangdong Universily of Technology, Guangzhou 510006, China) Abstract: Magnetron sputtering processes have been widely appleed to thin film deposition nowadays in various industrial fields due to its outstanding advantages, and the technology itself is progressing further. The unbalanced magnetron sputtering process can improve the plasma distribution in deposition chamber to make film quality better. The medium -frequency and pulsed magnetron sputtering proceses can efficiently avoid the hysteresis during reactive sputtering to eliminate target poisoning and arcing, thus improving the stability and depositing rate in preparing thin compound films. Higher utilization of target can be obtained by improved target design, and the high -speed sputtering and self -sputtering provide a new field of applications in magnetron sputtering coating processes. Key words: coating technology; magnetron sputtering; magnetron sputtering target [1] 溅射镀膜的原理 是稀薄气体在异常辉光 也能进行;另外，还可降低溅射电压，使溅射在低 放电产生的等离子体在电场的作用下，对阴极靶 气压，低电压状态下进行