TaN薄膜的残余应力研究.doc

摘 要 本文以TaN薄膜中的残余应力为研究对象TaN薄膜物理气相沉积的方法反应气体流量、基体温度、功率、工作压力使用扫描电镜观察薄膜的组织形貌，用能谱仪测量膜的成分，用X射线衍射仪标定薄膜的相结构，用X射线应力测量仪测薄膜在不同工艺下的残余应力，并从量子力学角度分析残余应力产生的原因。 结果表明：随着氮气的，膜的晶粒变细，膜中氮含量升高，相转变为单一的面心立方TaN，残余应力升高基体温度升高残余应力增大残余应力此外，溅射功率的改变导致薄膜厚度的改变残余应力。当氮2sccm，基体温度25℃，功率150W，工作压力0.3Pa时的TaN薄膜残余应力最小。关键词：TaN薄膜；残余应力；物理气相沉积；相分析 ABSTRACT In this paper, the TaN films were prepared by physical vapor deposition (PVD). The residual stress in TaN films was determined by X-ray diffraction methods and the influences of film deposition parameters, such as reactive gas flux, substrate temperature, power and working pressure, on the residual stress were investigated. The mechanism of residual stress formation was discussed by quantum mechanics theory. The microstructures, compositions and phases were also studied by means of scanning electron microscope (SEM), energy disperse spectroscopy (EDS) and X-ray diffraction (XRD), respectively. Results show that the TaN films deposited on higher nitrogen gas flux have finer grains, higher nitrogen content, single fcc-TaN phase structure and higher residual stress. With the increase of the film deposition temperature the residual stress in the film increases. The residual stress in these films deposited on the higher work pressure is also higher. In addition, the sputtering power affects the film thickness and sequentially influences the residual stress in the film. The following deposition conditions may be in favor of preparing the TaN film with lowest residual stress: nitrogen gas flux of 2 sccm, substrate temperature of 25 ℃, power of 150 W, working pressure of 0.3 Pa. Key words：TaN films；residual stress； physical vapor deposition；phase analysis 目 录 第1章 绪论 1 1.1 概述 1 1.2 物理气相沉积 2 1.2.1 物理气相沉积（PVD）概述 2 1.2.2 溅射技术 3 1.2.3 磁控溅射 5 1.3 钽系薄膜的性能及应用 7 1.3.1 钽的基本性能 7 1.3.2 氮化钽的性能与应用 7 1.4 薄膜残余应力 8 1.4.1 薄膜残余应力的产生 9 1.4.2 残余应力测定原理 10 1.4.3 薄膜残余应力的测定方法 14 1.5 本毕业设计的内容 16 第2章 TaN薄膜制备 17 2.1 实验设备及材料 17 2.1.1 实验设备 17 2.1.2 实验材料 17 2.2薄膜的制备过程 17