MEMS可变电容的研究现状与进展_李玲玉.pdf

MEMS MEMS DeviceTechnology MEMS 可变电容的研究现状及进展 1, 2 1, 2 1, 2 1 2 李玲玉 , 童 富 , 杨月寒 , 赵建明, 刘海文 ( 1. 电子科技大学 电子薄膜与集 器件国家重点实验室, 都 6100 54; 2 . 中国科学院 光电技术研究所 微细加工光学技术国家重点实验室, 都 610209) : 介绍了微机电系统 ( MEMS) 技术以及MEMS 可变电容器, 基于 MEMS 的可变电容具 有高Q 值低损耗宽调节范围和低噪声等优点, 阐述了MEMS 可变电容器设计的基本原理, 列举了现有的几种典型结构模型通过指定频率下Q 值及调谐范围的具体数值, 比较不同结构 的MEMS 可变电容的特点, 展望了MEMS 可变电容的发展并得出结论 : 平行板可变电容; 面积调谐可变电容; 微机电系统 ( MEMS) ; Q 值; 调谐范围; 射频 : TH703; T M532.5 : A : 167 1- 4776 (20 08) 05- 0287- 06 Status and Progress of MEMS Variable Capacitors 1,2 1,2 1,2 1 2 Li Lingyu , Tong Fu , Yang Yuehan , Zhao Jian ing , Liu Haiwen ( 1. State K ey Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of hina, hengd u 6 10 054, hina; 2. State K ey L aboratory of Op tical Technologies f or Microf abrication, Institute of Op tics Electronics, hinese Academy of Sciences, hengd u 6 10209, hina) Abstract: Variable capacitors based on the icroelectron echanical syste (MEMS) technolo gy are introduced. The capacitors have the erits of high Q, low loss, wide tuning range and low noise. The basic design principle for MEMS variable capacitors is presented, and several typical structure odels are given. Co paring the structure characteristis of MEMS variable ca pacitors, the prospection and the conclusion are discussed by updated quality factors ( Q) and tuning range. Key words: parallel plate variablecapacitor; area tuning var