VLSI中钛硅化物肖特基接触特性与退火条件.pdf

第21卷　第4期 Vol.21, No. 4 　　　　　 2001 年11 月 RESEARCH PRO RESS OF SSE Nov. , 2001 VLSI 黄榕旭 蒋聚小　郑国祥　俞宏坤　任云珠 ( , 200233) (, , 200433) 徐蓓蕾 (, ,200433) , : , TiSi2 Ti VLSI ( SBD)AES / , / / / T i Si Al TiN Ti Si SBD VLSI :RTP;; ; + : 311 7: : 1000-3819(2001)04-415-10 T N A Schottky Contact Property and Annealing Condition of Titanium Silicides in VLSI HUAN Rongxu (A dvanced Semiconductor M anuf acturing Corp ., S hang hai, 200233,CH N ) JIAN Juxiao ZHEN uoxiang YU Hongkun REN Yunzhu (D ep artment of M aterials Science of F ud an Univ ersity , Shanghai, 200433, CH N ) XU Beilei (D ep artment of Electronic Engineering of Fudan Unviers ity , S hanghai , 200433,CH N ) : 2 Abstract T he advantage of low resistivity of T iSi makes Ti beneficial to be used to fabricate Schottky barrier diodes ( SBD) . T i silicide ohmic contact and Schottky contact can be obtained at the same time in VLSI process. T he advanced analysis techniques like AES have been used to investigate