从MOCVD谈LED磊晶技术-清华大学产学合作营运.PDF

從MOCVD談LED磊晶技術 照明與能源光電研究所 郭政煌 kuoch@mail.nctu.edu.tw 2011/3/4 1 Outline  量產型MOCVD簡介  磊晶技術v.s. LED發光效率  磊晶的未來技術發展 2011/3/4 2 Main manufacturing steps and related options of Nitride-based LEDs 2011/3/4 3 Basics of MOCVD equipment III H2 or N2 V  Group III : MO source  Group V : hydrides(NH ) 3  Carrier gas: H2 or N2  Growth temperature: substrate 500°C – 1500°C  Growth Pressure : heater 25 – 760 torr Exhaust 2011/3/4 4 Mass production MOCVD  MOCVD maker 1.Aixtron 2.Thonmas Swan 3.Veeco 4.Nippon Sanso(日本酸素 ) 5.New Company 2011/3/4 5 Reduce the epitaxy running cost  Throughput ↑ - runs/day  Yield ↑ - Wavelength Brightness uniformity  Running cost per wafer area ↓ - Wafer size (2’’4’’6’’) 2011/3/4 6 Evolution of mass production MOCVD G5 G5X2  Aixtron : 1x2’’3x2’’6x2’’11x2’’24x2’’42x2’’ 56x2’’ (14 x4’’, 8 x6’’) G5 X2  Thomas Swan: CRIUS II 1