溅镀站参数规范(已改).docVIP

标准书 Specification 制订部门 Written by Department 撰写者 / 日期 Written by / Date 审核者 / 日期 Reviewed by / Date 核准者 / 日期 Approved by / Date 工程部 谢红梅 文件变更履历页 Document Change History 版次 Rev. 撰写者 Originator 变更内容简述 Change Description 变更依据文件号码 DCN # 生效日期 Eff. Date A001 谢红梅 New Release 接续页CONTINUATION□是YES；■否NO  目的Purpose: 根据不同的制程，不同的溅镀薄膜材质制定程序参数规范。 According to different process and material to define fit recipe parameter 适用范围Scope: 生产在线6吋及8吋芯片的铝薄膜溅镀。 Aluminum alloy sputtering on both 6 and 8-inch wafer currently 3.0参考文件Reference: 3.1溅镀站标准作业标准书；Sputter Station Specification……..PE-045 4.0名词定义Definition: NA 5.0 参数说明 Recipe explain NA 6.0程序名称及参数Recipe Name and Parameter: 6.1 Process Name:sputter_Lead Step Nr. Type Name Step Description / Notes 1 2 2 3 5 6 7 8 9 10 11 12 13 LC-Pump LC-Degase LC-Etch1 LC-Etch2 Transp. to MC MC-Pump MC-PresputterH MC-preSputterL MC-sputter L MC-sputter H MC-Pump Transp. to LC LC-vent pump down heater ign etch surface trans cage pump down sputter AICU4 pump trans rotary vent 5.0-6Torr 30 passes 30s, 50%power 1 passes 30s,0.2kw, 10sccm 20 passes 30s,0.7kw,0V,10sccm 5.0-7 Torr DC,5 passes 10s,120sccm,2:5kw[P] DC,5 passes 10s,120sccm,2:0.2. kw[P] DC,1 passes 10s,120sccm,2:0.2. kw[P] DC,108 passes 10s,120sccm,2:10kw[P] 1.0E-6Torr stop before vent Edit Step LC-Pump Transf. Press. X 5E-6 [mbar] Name pump down Pressure Timeout 0 [s] Notes Time per Pass 30 [s] Edit Step LC-Degas Passes 30 Name vent Time per Pass 30 [s] Notes Degas Power 50 % Start Pressure none [mbar] Pressure Timeout 0 [s] Gas Ramp Time 0 [s] No. Name Ramp Start Flow Gas A 0 [sccm] Edit Step LC-Etch 1 Continue Step Offset: 0 [steps] Auto Replays: 0 Passes 1 Name ign Time per Pass 30 [s] Notes Start Press