640×512InGaAs探测器驱动电路设计-红外技术.PDF

第34 卷 第 3 期 红 外 技 术 Vol.34 No.3 2012 年 3 月 Infrared Technology Mar. 2012 640 ×512 InGaAs 探测器驱动电路设计 1,2 1 1 1 刘云芳 ，李建伟 ，李玉敏 ，冯 旗 （1. 中国科学院上海技术物理研究所，上海 200083 ；2. 中国科学院研究生院，北京 100039 ） 摘要：在介绍了640 ×512 InGaAs 探测器工作原理的基础上，详细分析了InGaAs 探测器驱动电路的 组成原理、设计方法，重点是偏置电压电路、脉冲电压与控制信号驱动电路、探测器工作温度检测及 控制电路的设计等关键技术。采用模拟 PI 温控电路保证了探测器内部制冷器在温控过程中对探测器 无干扰，并能使探测器稳定地工作在合适的温度点，这样有利于提高仪器的信噪比。试验结果表明： 该驱动电路满足系统要求，能用于工作温度比较宽的场合，并具有体积小、实用性好、可靠性高等特 点。 关键词：InGaAs 探测器；驱动电路；模拟PI 温控电路 中图分类号：TN215 文献标识码：A 文章编号：1001-8891(2012)03-0146-05 A Design for Driving Circuit of 640 ×512 InGaAs Detector 1,2 1 1 1 LIU Yun-fang ，LI Jian-wei ，LI Yu-min ，FENG Qi (1.Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; 2. Graduate School, Chinese Academy of Sciences, Beijing 100039, China) Abstract ：On the basis of introducing the work principle of 640 ×512 InGaAs detector, the structure of 640×512 InGaAs detector driving circuit and the method of design are analyzed. The discussed key problems are bias voltages circuit, pulse voltages and controlling signals driving circuit, the collecting and controlling circuit for InGaAs detector working temperature are introduced. The analog PI temperature controlled circuit is adopted, that make sure the process of detector working has no disturb and the detector can work stability, is also can improve the signal-to-noise(SNR) of instrument .Experiments demonstrate the