微电子技术学科前沿_FinFET_SiGe.ppt

异质结双级晶体管的结构特点　 具有宽带隙的发射区大大提高了发射结的载 流子注入效率 功率密度高 相位噪声低线性度好 ＨＢＴ结构图解 HBT适用范围: 低相位噪声振荡器 高效率功率放大器 宽带放大器 SiGeHBT水平结构图 GaSeHBT结构图 (2) LDMOS – LIGBT – 阳极短路  LIGBT–SINFET-- SiGe阳极LIGBT 结构 原理 优缺点 LDMOS--–LIGBT---–SINFET-–-阳极短路LIGBT S LD高 S LIGBT低 S SIN= S LD S LIGBT S阳短 S LD RON大 RON大 RON LD R LIGBT RON LD SiGe阳极LIGBT：特点与SINFET相近，然而速度和可控、便于大规模生产  n沟道SINFET截面图 p-sub n-epi 肖特基接触 p p+ n+ K G A 锗硅阳极绝缘栅异质结晶体管 锗硅阳极绝缘栅异质结晶体管（续） 窄禁带异质SiGe源区IGHBT 窄禁带异质SiGe源区、 宽禁带异质阳极IGHBT 阳极短路IGHBT 微电子技术前沿— 微电子中的人类智慧 深掏滩，低垒堰 云盘山--三星堆--金沙--望帝/从帝--都江堰 古蜀文化是人类文明的宝贵财富 因势利导，化不利为有利--造就了成都平原的富庶 在微电子技术中，到处闪耀着人类智慧 能攻心则侧反自消,自古知兵非好战 不审势则宽严皆误,后来治蜀要深思 本课尝试： 1. 介绍有关微电子技术的更广泛的知识 2. 介绍一些重要器件与电路发明的思路 希望大家不仅仅是从专业上理解本课内容 微电子技术前沿— 微电子中的人类智慧 Fin-FET Background First developed by Chenming Hu and colleagues at the University of California at Berkeley, which attempts to overcome the worst types of short-channel effect encountered by deep submicron transistors. Fin-FET Background These kinds of effects(SCE) make it harder for the voltage on a gate electrode to deplete the channel underneath and stop the flow of carriers through the channel – in other words, to turn the transistor Off. Gate can’t control the leakage current paths that are far from the gate Introduction to Double-Gate The gate controls a thin body from two sides. Double-Gate MOSFET Structure options Double‐Gate vs. Tri‐Gate FET Double‐Gate vs. Tri‐Gate FET The Double‐Gate FET does not require a highly selective gate etch, due to the protective dielectric hard mask. Additional gate fringing capacitance is less of an issue for the Tri‐Gate FET, since the top fin surface contributes to current conduction in the ON state. Fin-FET Structure Evolution Intel Tri-Gate Transistor Intel Tri-Gate Transistor GATE FIN 微电子中的人类智慧 窄禁带异质源漏区MOSFET结构 SiGe源区 SiGe漏区 Si衬底 SiGe源漏区MOSFET带来的器件性能改善