以堆叠式闸极介电层实现具有优异电流趋动能力与可靠度之高效能鳍.PDF

1 02 Enhanced FinFET Performance by Stacked Gate Dielectric Featuring Higher Current Drive Capability and Superior Reliability (HK Dielectric) 20nm (FinFET) 20 %-22 % (Drive Current) ~22% (Transconductance, gm) 4% ~33% (EELS) X (XPS) (Oxygen Vacancy) (Bias Temperature Instability, BTI) (Lifetime Test) Abstract HK-2/HK-1 stacked dielectric was proposed as the gate dielectric for sub-20 nm FinFET technology. Compared to single HK-1 dielectric, the stacked gate dielectric exhibits superior performance in terms of improved drive current by 20~22% and increased transconductance by ~22%. The main reason accounting for the better performance, besides the higher gate capacitance by 4%, is the enhanced carrier mobility by ~33% resulting from less remote scattering due to smaller amount of charged oxygen vacancies which was physically confirmed by EELS and XPS. Owing to the reduced oxygen vacancies, from bias temperature instability and lifetime test, the stacked gate dielectric demonstrates NANO COMMUNICATION 23 No. 2 03 augmented reliability as well. Most importantly, HK-1 and HK-2 are common dielectrics completely compa