反应溅射GeXC1-X薄膜的沉积速率-OALib.PDF

/ 19982 X 1-X Ge C Deposition Rate of GeX C1- X Films Prepared by Reactive Sputtering ( ) iu Zhengtang Zhu JingzhiSong Jianquan Zheng Xiulin ( College of Materials Science and Engineering, N orthwestern Polytechnical University) [ ] Ge C , X 1- X , Ge C X 1- X [ Abstract] In this paper, GeX C1- X films were prepared by radio frequency magnetron reac- 4 tive sputtering in CH / Ar in a wide range of processing parameters . The effect of processing pa- rameters on the deposition rate has been studied. Experiment results showed that the deposition 4 rate decreased sharply when the gas flow ratio CH / Ar increased to a certain number . With the increase of the radio frequency power, the deposition rate increased . A maximum deposition rate occurred varying with the gas pressure. The relationship between the film thickness and the de- position time seemed different in targetpoisoning and non-target -poisoning. X 1- X Keywords Ge C films magnetron reactive sputtering deposition ratetarget poison- ing Ge C 1 X 1- X GDM -300BN , ( GeXC1- x ) , [14] , ( 99. 995% ) 0 8-2 / Ar CH4 D