基于无催化剂化学气相沉积法的氮化镓纳米线制备和表征 - 井冈山大学.PDF

第36 卷第1 期 Vol.36 No.1 冈山大学学报( 自然科学版) 2015 年1 月 Jan. 2015 Journal of Jinggangshan University (Natural Science) 81 井冈山大学学报( 自然科学版) 81 文章编号：1674-8085(20 15)01-0081-04 基于无催化剂化学气相沉积法的氮化镓纳 米线制备和表征 * 李林虎，张 勃，沈龙海 （沈阳理工大学理学院，辽宁，沈阳 110159 ） 摘 要：采用化学气相沉积法，通过金属镓和氨气的直接 应，在石英衬底上沉积出GaN 纳米线。利用 XRD 和 SEM 对制备的 GaN 纳米线进行了结构和形貌的表征。结果表明合成的 GaN 纳米线为六方纤锌矿结构，直径为 100~200 nm ，长度达几微米，GaN 纳米线的生长符合VLS 生长模型。室温PL 光谱表明GaN 纳米线在395 nm 和 566 nm 的发光峰主要与Ga 空位或者N 空位引起的缺陷能级相关。 关键词：石英；GaN 纳米线；缺陷能级 中图分类号：O47 1.4 文献标识码：A DOI: 10.3969/j.issn.1674-8085.20 15.01.0 16 SYNTHESIS AND CHARACTERIZATION OF GaN NANOWIRES BY THE CATALYST-FREE CHEMICAL VAPOR DEPOSITION METHOD * LI Lin-hu, ZHANG Bo, SHEN Long-hai (School of Science, Shenyang Ligong University, Shenyang, Liaoning 110 159, China) Abstract: GaN Nanowires were deposited on quartz substrate by direct reaction of the metal gallium and ammonia using the CVD method. The structure and the morphologies of GaN nanowires were characterized by XRD and SEM. The nanowires were hexagonal wurtzite structure with diameters ranging from 100 nm to 200 nm and lengths of about several microns. The growth of GaN nanowires is governed by a VLS growth mechanism. The room temperature photoluminescence (PL) measurements show that the emission at 395 nm and 566 nm mainly are related by defect levels, which are caused by the Ga vacancy and N vacancy. Key words: quartz; GaN nanowires; defect level 村修二和天野浩以及日本科学家赤崎勇三位科学 0 引言