硅业副产物SiCl4资源化电沉积硅及其性能研究刘静静1，赵占霞1.DOC

硅业副产物SiCl4资源化电沉积硅及其性能研究 刘静静1，赵占霞1，张承龙2，马忠权1 （1.上海大学 理学院物理系，上海 200444 2.上海电子废弃物资源化协同创新中心，上海第二工业大学 电子废弃物研究中心，上海 201209） 摘要：以硅业副产物四氯化硅（SiCl4）为溶解物，离子液体[BMIM]TF2N为溶剂，碳酸丙烯酯（PC）为支持电解质，采用三电极系统，用C-AFM方法研究[BMIM]TF2N与PC的质量比、电解液温度和沉积时间对阴极板生成物电学性质的影响，以及硅薄膜结构和表面形貌对其电学性质的影响。拉曼光谱结果证实沉积的硅薄膜是非晶态结构，在质量比为1︰3的常温电解液中沉积1 h制备出的硅薄膜具有很好的均匀性和电学性质。 关键词：离子液体；四氯化硅；C-AFM；硅薄膜；电学性质 中图分类号：X756；TN304.1+2 文献标志码：A 文章编号：1007-7545（2017）0-0000-00 Study on Resource Utilization of By-product SiCl4 from Polysilicon Industry and Properties of Electrodeposited Silicon Film LIU Jing-jing1, ZHAO Zhan-xia1, ZHANG Cheng-long2, MA Zhong-quan1 (1. Department of Physics, Shanghai University, Shanghai 200444, China; 2. Shanghai Collaborative Innovation Centre for WEEE Recycling, WEEE Research Centre of Shanghai Second Polytechnic University, Shanghai 201209, China) Abstract：Silicon film was electrodeposited on titanium plate in three-electrode system. Effect of mass ratio of ionic liquids [BMIM]TF2N to propylene carbonate (PC), electrolyte temperature, and deposition time on electrical property of cathode plate products by C-AFM applying polysilicon industry by-product SiCl4 as solute, [BMIM]TF2N as solvent, and PC as supporting electrolyte were investigated. Effect of silicon thin film structure and surface morphology on its electrical property was studied. Microstructure, surface topography and electrical properties of films were studied by Raman, SEM and I-V, respectively. The results show that cathode deposition film is amorphous silicon film. Silicon film, deposited at room temperature for one hour with mass ratio of [BMIM]TF2N to PC of 1︰3, has uniform structure and good electrical conductivity. Key words：ionic liquids; SiCl4; C-AFM; silicon thin film; electrical property 四氯化硅（SiCl4）是硅产业的主要副产物，产量大且污染严重，但同时也是一种宝贵的硅资源。离子液体由于其良好的稳定性较宽的电化学窗口以及表面极低的饱和蒸汽压等优良特性而受到青睐但由于非水电解液导电性较差，需要加入支持电解质（盐或无反应离子物质）增加其离子导电性，其中碳酸丙烯酯（PC）就是一种有效的支持电解质。电化学沉积技术在工业方面有广泛的应用，例如电镀工艺，对于这种方法，硅的前驱体一般为硅基卤化物，比如SiCl4、SiBr4、SiI4、SiHCl3。因此通过电化学沉积技术在离