基于概率CMOS模型的反馈环路的数字电路容错特性-电子与信息学报.PDF

第 39 卷第 7 期 电 子 与 信 息 学 报 Vol.39No.7 2017 年 7 月 Journal of Electronics Information Technology Jul. 2017 基于概率CMOS模型的反馈环路的数字电路容错特性分析 李 妍* 胡剑浩 杨泽国 (电子科技大学通信抗干扰国家级重点实验室 成都 611731) 摘 要：反馈环路是模拟电路中有效容错的电路结构。反馈电路也因其存储性能而被广泛使用于数字电路的时序电 路中，但是反馈电路在数字电路的组合电路的稳定特性鲜少被人研究，尤其是低功耗应用。以马氏随机场为理论的 MRF 电路以其低功耗下的高稳定性得到研究和关注，但其电路的反馈结构缺乏理论支持和依据，因此马氏随机场 电路的容错特性未被清晰得以解释。该文以利用概率CMOS 建模概率门来分析 MRF 核心反馈环 NAND-NAND， 从理论上证明了反馈电路输出的计算正确概率具有递增且上有界的特点，并数学证明了 MRF 的核心反馈环电路具 有优于传统 CMOS 电路的容错性能。其理论推导结果与测试结果呈现一致性。 关键词：反馈电路；容错；概率 CMOS 中图分类号： TN43 文献标识码：A 文章编号：1009-5896(2017)07-1634-06 DOI: 10.11999/JEIT161096 Fault-tolerant Analysis for Feedback Based Digital Circuit via Probabilistic CMOS Model LI Yan HU Jianhao YANG Zeguo (National Key Laboratory of Science and Technology on Communications, University of Electronic Science and Technology of China, Chengdu 611731, China) Abstract: Feedback structure is an efficient topology for noise-reducing in analog circuit while the cyclic circuit is widely used in digital circuit only for sequential circuit design due to its data-keeping property. However, few works study the reliability of the feedback structure for combinational circuits especially for the low power application. Many researchers pay their attentions to Markov Random Field (MRF) theory based circuits, which can operate in ultra-low supply voltage with high noise-immune. However, the MRF based circuit design methodology has a lack of the proof of the final feedback structures. Thus the reliability of MRF based feedback structures is not explained clearly. This paper uses the probabilistic CMOS m