体硅CMOSFinFET结构与特性研究.PDFVIP

8 Vol. 33 No. 8 2005 8 ACTA ELECTRONICA SINICA Aug . 2005 CMOS FinFET 殷华湘, 徐秋霞 ( , 100029) : SOI FinFET MOS . FinFET , , . CMOS CMOS FinFET CMOS . CMOS FinFET . : CMOS : TN406 : A : ( 2005) Bulk Silicon CMOS FinFET s Struct ure and Characteristics YIN Huaxiang, XU Qiuxia (Silicon Device Integrated Circuit Technology Division, Institute of Microelectronics, ChineseAcademy of Sciences, Bejiing 100029, China) Abstract: Original SOI FinFET w as considered as the best candidate among various nonclassic MOS stru ctures. This paper f irstly built a FinFET structure on normal bulk - Si substrate by a reasonable design .The SCE of FinFET fabricated on the noninsulat ing substrate w as suppressed greatly for the existing of a grooved planar device by parallel connection. In addition , this new structure provided more process space than original SOI FinFET. The devices, which w ere f abricated w ith a standard CMOS process, showed a good p erformance and w ere integrated into a sm allscale circuit su ccessfully.The results demonstrated that bulkSi FinFET w as a good solution f or future VLSI. Key w ords: f inFET bulksi grooved device novel structure CMOS , FinFET VLSI , 1 100 , . CMOS 12 2 , 0. 13 , 100 . : MOSFET SOI FinFET 1( a) . SOI , 50 , Fin, . [ 1] . CMOS ,