国外GaAs光电阴极光谱响应特性比较与分析-红外技术.PDFVIP

第27 卷 第3 期 红 外 技 术 Vol.27 No.3 2005 年5 月 Infrared Technology May 2005 〈材料与器件〉 国外GaAs光电阴极光谱响应特性比较与分析* 1,2 1 1 杜玉杰 ，杜晓晴 ，常本康 （1. 南京理工大学 电子工程与光电技术学院，江苏 南京 210094 ；2. 滨州学院物理科学与工程系，山东 滨州 256604 ） 摘要：对国外标准三代、高性能三代、超三代和四代 GaAs 光电阴极进行了光谱响应曲线比较。结果 显示，GaAs 光电阴极的积分灵敏度、响应的截止波长、峰值响应和峰值位置存在明显差异。曲线拟合 结果表明国外 GaAs 光电阴极的后界面复合速率较低，表面逸出几率和电子扩散长度从标准三代到四 代不断提高，这些性能的改善导致了GaAs 光电阴极灵敏度的提高。 关键词：GaAs 光电阴极；光谱响应；灵敏度；逸出几率；扩散长度 中图分类号：TN219 文献标识码：A 文章编号：1001-8891(2005)03-0254-03 Compare and Analysis of Spectral Response Characteristics of Foreign GaAs Photocathodes 1,2 1 1 DU Yu-jie ，DU Xiao-qing ，CHANG Ben-kang (1.School of Electronic Engineer and Optoelectronic Technique, Nanjing University of Science Technology, Jiangsu Nanjing 210094, China; 2. Department of Physics Engineer, Binzhou University, Shandong Binzhou 256604, China) Abstract ：The spectral response curves of foreign standard Gen III, high performance Gen III, super Gen III and Gen IV GaAs photocathodes had been compared.There are obvious differences of integral sensitivity, response cut-off wavelength, peak response value and peak position among these photocathodes. The curve simulation results showed that foreign GaAs photocathodes have low interface recombination velocity, and surface escape probability and electron diffusion length have been improving from standard Gen III to Gen IV, which led to increase of sensitivity the GaAs photocathodes. Keywords：GaAs photocathodes ；spectral response；sensitivity；escape probability；diffusion l