以常压热化学气相沉积法由乙炔成长奈米碳管之研究-南台科技大学.DOC

氧氣濃度對NdOx薄膜電阻式記憶體之影響 劉偉呈1、1、陳開煌2 1南臺科技大學電子工程系 台南市永康區南台街一號 2東方設計學院電子與資訊學系 高雄市湖內區東方路110號 摘要 本研究利用射頻磁控濺鍍法??RF magnetron sputtering ?於ITO/Glass基板上通入氧氣與釹進行反應，沉積非當量氧化釹( NdOx )薄膜而形成NdOx/ITO/Glass結構，並在此薄膜表面上蒸鍍鋁(Al)作為上電極以形成Al/NdOx/ITO/Glass之MIM(金屬/絕緣層/金屬)薄膜電阻式記憶體元件。本文之主要目的為探討通入不同氧氣濃度對NdOx薄膜電阻式記憶體特性之影響並分析出最佳的製程參數，其中將使用半導體參數分析儀(HP4516C)針對薄膜層進行電流對電壓( I-V )特性、元件連續切換次數(endurance)以及電流傳導機制等電特性分析，(FE-SEM)觀察薄膜的表面形態。由實驗結果得知當通入4 sccm氧氣時記憶體具有70次以上之最佳連續切換次數，且電阻開關比值為2，並且薄膜表面晶粒形態有著較佳的均勻性，以及呈現出操作電壓約為1伏特之雙極性切換特性。 關鍵字：氧化釹，電阻式記憶體，氧氣濃度 The Inferences of Oxygen Concentration for the NdOx Random Resistive Access Memory Thin Films Liou-Wei Cheng1 , Chien-Min Cheng1 , and Kai-Huang Chen2 1Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan 2Department of Electronic Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung 82941, Taiwan? ABSTRACT In this research, by the RF magnetron sputtering technique, nonstoichiometric NdOx thin films were deposited on the ITO/Glass substrates to form the NdOx/ITO/Glass structures. Then the Aluminum was vaporized on the NdOx thin film to be the top electrode, and the Al/NdOx/ITO/Glass (MIM; Metal/Insulator/Metal) random resistive access memories were achieved. The major goal of this paper is to investigate the inferences of different oxygen contents for the NdOx thin films and obtain the optimal fabricated parameters. Additionally, the semiconductor parameter analyzer (HP4516C) was used to analyze the I-V characteristics, switching number (endurance), and current transition mechanism. And finally, the Field-Emission Scanning Electronic Microscope (FE-SEM) was used to observe the surface of thin films. From the results, whereas injected 4 sccm oxygen concentration, the memory reveals more than 70 optimal switching number, On/Off ratio of 2, better uniform grains growth can be obtained, and bipolar switching properties for about 1 V operating voltage. KEYWORDS: NdOx, Random Resistive