生长模式控制对MOCVD生长GaN性能的影响 - 华南师范大学学报.PDF

华南师范大学学报 (自然科学版) 2005年 11月 JOURNAL OF SOUTH CH INA NORMAL UN IVERSITY 2005年第 4期 Nov. 2005 ( NATURAL SCIENCE ED ITION) No. 4, 2005 : 1000- 5463( 2005) 04- 0058- 05 MOCVD GaN 李述体, 范广涵, 周天明, 孙慧卿, 郑树文, 郭志友 ( , 510631) : MOCVD A l O GaN . X CV 2 3 GaN. , GaN . GaN , GaN, GaN, , G aN . : ; GaN; MOCVD; X ; ECV : TN304. 2+ 3 : A THE INFLUENCE OF GROWTH MODE TO THE CHARACTERISTICS OF GAN GROWN BY MOCVD LI Shu- ti, FAN Guang- han, ZHOU Tian- m ing, SUN H ui- qing, ZHENG Shu- w en, GUO Zh i- you ( Institute ofOpto- electronicM aterials and T echnology, South China N orm alUniversity, Guangzhou 510631, China) Abstract: The grow th ofGaN w as perform ed by aThomas Sw anMOCVD on ( 0001) orien ted sapph ires. Properties of GaN layersw ere investigated by double crystalX - ray diffrac tion, optical m icroscope and ECV measurements. The results indicated that the grow th mode obviously influenced the electric parameters and crystal quality of GaN layers. The crystal quality cou ld be mi proved and the background carrier concentrations could be re duced if the three dmi ension growth of GaN w as prolonged properly at the beginn ing of h igh temperature GaN growth. Key w rds: sem iconductor; GaN; MOCVD; double crystal X- ray diffraction; ECV - , [ 1] . 1994 [ 2, 3] GaN LED , . - A l O (), GaN ( 16% ) 2 3 , . [ 1] . G aN : 2005- 0 - 01 : ( 00 - 068); ( 660119) : ( 19 5 ) Em ail: lishuti@ scnu edu cn 第