STB13007DT4;中文规格书,Datasheet资料.pdf

STB13007DT4 High voltage fast-switching NPN power transistor General features ■ Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode 3 ■ Low spread of dynamic parameters 1 ■ Minimum lot-to-lot spread for reliable operation 2 ■ Very high switching speed D PAK ■ Fully characterized at 125 °C (T0-263) ■ Large RBSOA ■ In compliance with the 2002/93/EC European Directive Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. Applications ■ Electronic transformers for halogen lamps ■ Switch mode power supplies Order codes Part Number Marking Package Packing STB13007DT4 B13007D D2PAK Tape Reel April 2007 Rev 2