BULT118M;BULT118;中文规格书,Datasheet资料.pdf

BULT118 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ) s ( Applications t c ■ Electronic ballast for fluorescent lighting u d 1 ■ Flyback and forward single transistor low power o 3 2 ) r converters s SOT-32 ( P t e c Description t u e d The device is manufactured using high voltage l o o r Figure 1. Internal schematic diagram s multi-epitaxial planar technology for high b P switching speeds and medium voltage capability. e O t It uses a cellular emitter structure with planar - e ) l edge termination to enhance switching speeds o s while maintaining the wide RBSOA. ( s t b c The device is designed