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IXDN602SIA;IXDN602PI;IXDI602SIA;IXDF602SIA;IXDF602D2TR;中文规格书,Datasheet资料
IXD_602
2-Ampere Dual Low-Side
Ultrafast MOSFET Drivers
INTEGRATED CIRCUITS DIVISION
Features Description
• 2A Peak Source/Sink Drive Current The IXDF602/IXDI602/IXDN602 dual high-speed gate
• Wide Operating Voltage Range: 4.5V to 35V drivers are especially well suited for driving the latest
• -40°C to +125°C Extended Operating Temperature IXYS MOSFETs and IGBTs. Each of the two outputs
Range can source and sink 2A of peak current while
• Logic Input Withstands Negative Swing of up to 5V producing voltage rise and fall times of less than 10ns.
• Matched Rise and Fall Times The input of each driver is CMOS compatible, and is
• Low Propagation Delay Time virtually immune to latch up. Proprietary circuitry
• Low 10A Supply Current eliminates cross conduction and current
• Low Output Impedance “shoot-through.” Low propagation delay and fast,
matched rise and fall times make the IXD_602 family
Applications ideal for high-frequency and high-power applications.
• Efficient Power MOSFET and IGBT Switching
• Switch Mode Power Supplies
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