IRFI4019H-117P;中文规格书,Datasheet资料.pdf

IRFI4019H-117P Features Key Parameters Integrated Half-Bridge Package VDS 150 V Reduces the Part Count by Half RDS(ON) typ. @ 10V 80 m Facilitates Better PCB Layout Qg typ. 13 nC Key Parameters Optimized for Class-D Qsw typ. 4.1 nC Audio Amplifier Applications RG(int) typ. 2.5 Ω Low RDS(ON) for Improved Efficiency TJ max 150 °C Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected