Ka 波段宽带薄膜匹配负载设计与制备研究 - 电子器件.PDFVIP

第35卷 第4 期 电 子 器 件 Vol.35摇 No.4 2012年8 月 ChineseJournal of Electron Devices Aug.2012 Design and Fabrication of Ka鄄Band Broadband Thin Film Terminations* * WANGLei,PENGBin ,JIANGHongchuan,WANG Yuanchao,LI Ling,ZHANG Wanli (StateKey Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China, Chengdu610054,China) Abstract:A Ka鄄band thin film termination with broadband matching network had been designed by real frequency method.The microwave characteristics of the thin film termination had been simulated and optimized in ADS and HFSS software.The simulation results show that the VSWR of thefilm termination islessthat 1.2 at thefrequency range of 32 GHz~40 GHz.The designed termination was fabricated by screen printing method and DC magnetron sputtering.The experimental results show that the VSWR of the fabricated termination is less than 1.3 at the frequency range of 30.3 GHz~37.4 GHz. Key words:microwave passive component;thin film terminations;broadband matching;Ka鄄band;TaN thin films EEACC:2120E摇 摇 摇 摇 doi:10.3969/j.issn.1005-9490.2012.04.002 Ka波段宽带薄膜匹配负载设计与制备研究* * 王摇 磊,彭摇 斌 ,蒋洪川,王渊朝,李摇 凌,张万里 (电子科技大学电子薄膜与集成器件国家重点实验室,成都610054) 摘摇 要:基于实频法思想设计了Ka波段薄膜匹配负载的宽带匹配网络,并利用ADS和HFSS软件进行了仿真和优化。 仿真 结果表明,在32 GHz~40 GHz频率范围内,所设计匹配负载的电压驻波比均小于1.2。 利用丝网印刷以及直流磁控溅射工艺 制备了所设计的薄膜匹配负载。 测试结果表明,所制备的TaN薄膜匹配负载在30.3 GHz~37.4 GHz频率范围内,其电压驻 波比均小于1.3。 关键词:微波无源器件;薄膜匹配负载;宽带匹配;Ka波段;TaN薄膜 中图分类号:TN61摇 摇 摇 摇 文献标识码:A摇 摇 摇 摇 文章编号:1005-9490(2012)04-0375-04 摇 摇 随着卫星通信,雷达,航天等技术的不断发展, 本文利用 ADS 软件,基于实频法思想来设计 [6] 促使微波器件和组件向着小型化、高频化方向发 Ka 波