以SEM 及AFM 进行多孔矽材料在抛光蚀刻及电解蚀刻之表面微观研究 .PDFVIP

華岡工程學報第 23 期 民國九十八年一月 中國文化大學工學院 Hua Kang Journal of Engineering Chinese Culture University vol.23 （2008 ）pp.41-48 以SEM及 AFM 進行多孔矽材料在拋光蝕刻及電解 蝕刻之表面微觀研究 １ 2 林嘉洤 、陳奕鴻 1 聖約翰科技大學電子工程研究所 2 中國文化大學材料科學與奈米科技研究所 摘要 本研究使用鐵氟龍陽極電化學蝕刻槽，配合氫氟酸與乙醇混合溶液進行陽極電化學 反應，在矽晶片表面形成多孔矽的結構。本研究以電子顯微鏡(SEM)觀察多孔矽表面及側 面結構並以原子力顯微鏡 (AFM)觀察多孔表面結構和粗糙程度。結果發現，在不同參數下 電子顯微鏡可以觀察到多孔矽結構及表面結構的多孔矽有拋光蝕刻及電解蝕刻，原子力顯 微鏡則可檢驗多孔矽表面層在製程中，受氫氣泡影響的結果。 關鍵字：陽極電化學蝕刻、多 孔矽、電子顯微鏡(SEM) 、原子力顯微鏡(AFM) The Analysis of Polishing and Anodization Etching on the Porous Silicon Thin Films by Scanning Electron Microscope and Atomic Force Microscope 1 2 J. C. Lin , and Y. H. Chen 1Department of Electronic Engineering, St. John’s University 2 Institute of Materials Science and Nanotechnology, Chinese Culture University Abstract The anodization electrochemistry etching is studied on the silicon based substrates by SEM and AFM. Porous silicon structure is fabricated in Teflon container with HF and alcohol mixture solutions. By SEM and AFM, the top view and cross section view can be observed and compared. It is found that the higher HF concentration would cause a deeper porous silicon film. In addition, the higher anodization current density would result in a rough surface. Besides, the hydrogen bubble influences the formations of porous thin film and its film quality. Its related properties are discussed in the paper. Keyword: Anodization electrochemistry etching 、porous silicon 、SEM 、AFM 41 １ 2 林嘉洤 , 陳奕鴻 ：以SEM 及 AFM 進行多孔矽材料在拋光蝕刻及電解蝕刻之表面微觀