sic薄膜红外及紫外-可见光谱的研究 - 红外技术.pdf

第27 卷 第4 期 红 外 技 术 Vol.27 No.4 2005 年7 月 Infrared Technology July 2005 SiC薄膜红外及紫外-可见光谱的研究* 1 1,2 1 1 1 陈长青 ，毛 旭 ，周祯来，陈 刚 ，杨 宇 (1.云南大学化学与材料工程学院，云南 昆明 650091; 2.北京信息工程学院传感技术研究中心，北京100101) 摘要：报道了在单晶Si衬底上采用RF磁控溅射技术异质外延生长SiC薄膜的研究。由傅立叶红外谱用双 声子组合法计算出SiC 的基本声子能量是TO ＝0.049 eV ，LO ＝0.048 eV ，TA ＝0.0045 eV ，LA ＝ 0.0078 eV；SiC的所有傅立叶红外吸收峰均可用这些声子能量按不同组合方式得到，并在紫外-可见光 谱中，光跃迁引起的吸收或放射的声子的能量也可以用这些基本声子能量按不同方式组合得到。 关键词：SiC，傅立叶红外吸收谱，紫外-可见光谱，基本声子组合 中图分类号：TN213 文献标识码：A 文章编号：1001-8891(2005)04-0314-05 Infrared and UV-Vis Spectra Studies of SiC Films 1 1,2 1 1 1 CHEN Chang-qing , MAO Xu , ZHOU Zheng-lai , CHEN Gang , YANG Yu (1.Institution of Chemistry Material and Engineering of Yun Nan University, Yunnan Kunming 650091, China； 2.Research Center of Sensor Technology, BeiJing Information Technology Institute, Beijing, 100101, China) Abstract ：The silicon carbide films were grown on si substrate at different temperature by RF magnetron sputtering. The films have been characterized by Fourier infrared absorption and UV-Vis spectrum technology. Based on the infrared absorption spectrum,the fundamental phonon energies of SiC film are calculated: TO ＝ 0.049 eV, LO ＝0.048 eV, TA ＝0.0045 eV, LA ＝0.0078 eV. Not only all of the Fouries infrared absorption peaks of the SiC consist of these elementary phonon energies in different combinations,but also the phonon energies arised from indirect transitions consist of these elementary phonon energies in different combinations. Key words：SiC films；Fourier infrared