高功率半导体激光器陶瓷封装散热性能研究 - 发光学报.PDF

第37卷摇 第5期 发摇 光摇 学摇 报 Vol郾37 No郾5 2016年5月 CHINESEJOURNAL OF LUMINESCENCE May,2016 文章编号:1000鄄7032(2016)05鄄0561鄄06 高功率半导体激光器陶瓷封装散热性能研究 * 倪羽茜,井红旗 ,孔金霞,祁摇 琼,刘素平,马骁宇 (中国科学院半导体研究所 光电子器件国家工程研究中心,北京摇 100083) 摘要:为实现半导体激光器单管的高功率输出,研究了使用氮化铝和碳化硅两种陶瓷材料制成的三明治 型过渡热沉的散热性能。 首先使用有限元分析方法计算,然后利用光谱法测量激光器的工作热阻。 数值 计算和实验测量结果均显示,碳化硅制成的过渡热沉所封装器件的工作热阻更低,散热效果更好。 此外, 实验进一步测试了器件的光电特性,结果表明碳化硅陶瓷制成的过渡热沉封装器件的电光转换效率更高、 输出功率更大。 915 nm 附近单管器件在注入电流15 A时的输出功率为16.3 W,最高电光转换效率达到了 68.3%。 关摇 键摇 词:高功率半导体激光器;有限元分析;热阻 中图分类号:TN248.4摇 摇 摇 文献标识码:A摇 摇 摇 DOI:10.3788/ fgx0561 Thermal Performance of High鄄power Semiconductor Laser Packaged by Ceramic Submount * NI Yu鄄xi,JING Hong鄄qi ,KONGJin鄄xia,QI Qiong,LIU Su鄄ping,MA Xiao鄄yu (NationalEngineering Research Centerfor OptoelectronicDevices,Institute of Semiconductors,ChineseAcademy of Sciences,Beijing 100083,China) *Corresponding Author,E鄄mail:jinghq@semi.ac.cn Abstract:In order to achieve higher output power of laser鄄diodes single emitter,thermal perform鄄 ance of sandwiched submountsbased on aluminum nitride and silicon carbidewasinvestigated. The thermal resistance of devices was first calculated by finite element method numerically,and then tested by spectralmethodexperimentally. Boththestimulatedresultsandtheexperimentaldatashow that the thermal resistance of devices packaged by SiC submounts is less than the AlN submounts, which meansbetter heat dissipation capability of SiC submounts. In addition,optical characteristics of the deviceswere further tested. It is showed that higher output power and higher electro鄄optical conversion efficiency are achieved by the devices