314nm 超薄SiO 2 栅介质的特性.PDF

2 Vol. 30 No.2 2002 2 ACTA ELECTRONICA SINICA Feb. 2002 314nm SiO 2 许晓燕, 谭静荣, 高文钰, 黄 如, 田大宇, 张 兴 ( , 100871) : LOCOS 314nm MOS , I-V V-t , , . 2 , 314nm SiO 1617MV/ cm, , 21 7C/ cm . 2 + + , P N . : ; ; : TN33111 : A : 0372-2112 (2002) 02-026-02 Electrical Characteristics of 314nm Gat e Oxide XU Xiao-yan,TAN Jing-rong, GAO Wen-yu,HUANG Ru, TIAN Da-yu, ZHANG Xing (Institute of Microelectronics, Peking University, Bejiing 100871, China) Abstract: MOS capacitors with 314nm gate oxide layer were manufactured in this experiment. By measuring current voltage characteristic and evolution of the gate voltage during constant current stress of the capacitors, the electrical characteristics of the gate oxide have been studied. In addition, the effect of boron penetration on gate oxide was investigated.The experimental results showed that the average breakdown field of the 314nm gate oxide was 161 7MV/ cm. Under constant current stress, soft breakdown occured and 2 + the average charge-to-breakdownwas 217C/ cm . For p polysilicon gate MOS capacitor, breakdown field and charge-to-breakdown of gate oxide were all decreased because of boron penetration. Key words: ultra-thin gate oxide; soft breakdown; boron penetration